Company Details
Operational Address : No. 99, Shenzhen Street, High-Tech Zone, Jilin, China (Mainland)
Business Type : Manufacturer
Location : Jilin, China (Mainland)
Year Established : 1999
Main Markets : Eastern Asia 50.00% Southeast Asia 50.00%
Main Products : Transistor,Mosfet,Thyristor,Igbt, Diode, Fast Recovery Diode (FRD), Insulated Gate Bipolar Transistor, LED Driver,Silicon Controlled Rectifier (SCR), MOSFET,Bipolar Junction Transistor (BJT), Schottky Barrier Diode (SBD),
Links : China Electronic Components & Supplies, China Active Components, China Transistors,
Company Introduction
Jilin Sino-Microeletronics Co., Ltd. (short for JSMC), a hi-tech enterprise, is mainly engaged in designing, manufacturing and marketing semiconductor devices. Benefited from decades of innovation, our company has been regarded as a national technology center, a postdoctoral workstation and an innovative enterprise by both the Ministry of Science and Technology and Chinese Academy of Sciences. With total asset of 3.1 billion RMB and nearly 2, 000 employees (more than 30% of them are developing engineers), JSMC covers approximately 400,000 square meters, including a building area of 135,000 square meters and a clean room area of 17,000 square meters. In March, 2001, JSMC was successfully listed on the main board of Shanghai Stock Exchange (600360) with total 521,600,000 share capital.JSMC currently operates 3-inch, 4-inch, 5-inch and 6-inch four production lines. We have an annual production capacity of approximately 3 million wafers and assembly capacity of 3 billion parts. Our main products are designed for use in fields like household electrical appliances, green illumination, PCs, automobile electronics, mobile communication and industrial control. Our brand has been honored as a Famous Brand of China. In addition, JSMC has now placed great emphasis on VDMOS, IGBT, FRED, SBD and BJT products. We are capable of providing total solutions for customers. Also many IPs in product and process design have been attained after years of efforts. At JSMC, a sound QA system is available. We have attained ISO9001:2000 certification. We comply with ISO14001 standard and OHSAS18001 and QC080000 standards. Benefited from all these experience, we have established partnership with NXP, FAIRCHILD, VISHAY and many domestic excellent colleagues. Our company has also been listed as a qualified supplier by FAIRCHILD. As one of the most advanced manufacturing bases of semiconductor devices, we have established an assembly base in Guangzhou to enhance customer service and market competitiveness. Guided by the general philosophy of "To enable people enjoy life", JSMC will always take honesty and win-win as operation principle and concentrate on continuous innovation. We also make efforts to further accelerate development in high-end products with independent intellectual property rights, increasing production scale of novel products, continuously strengthening the internal operations of lean management, improving operational efficiency and speeding up the pace of transition from production basis to research basis to reach the satisfaction of Government, Investors, Employees and the society.
Company Information
Contact Person : Mr. Rodney Zhang
Department : Sale
Job Title : Export Manager
Telephone :
Fax Number :
Address : No.99 Shenzhen Street, Jilin City Jilin Province, China
Zip/Post Code : 132013
Website : http://www.hwdz.com.c
Company Product
JT020N120WCD IGBT 40A 1200V Insulated Gate Bipolar Transistor 40A1200VJT015N120ABCD IGBT 30A 1200V Insulated Gate Bipolar Transistor 30A1200VJCS3205CH MOSFET 110A 55V Field Effect Transistor 110A55VJCS640H MOSFET 18A 200V Field Effect Transistor 18A200VJCS80N70CF MOSFET 80A 70V Field Effect Transistor 80A70VJCS4N65FC MOSFET 4A 650V Field Effect Transistor 4A650VJCS18N50FH MOSFET 18A 500V Field Effect Transistor 18A500VJCS10N70FH MOSFET 10A 700V Field Effect Transistor 10A700VJCS7HN60FC MOSFET 7A 600V Field Effect Transistor 7A 600VJCS20N60FH MOSFET 20A 600V Field Effect Transistor 20A600VHBR20100S SBD 20A 100V Schottky Barrier Diode 20A100VHBR10200S 10A 200V Schottky Barrier Diode 10A200VHBR10150S SBD 10A 150V Schottky Barrier Diode 10A150VSBL10L45 SBD LOW VF 10A 45V SchottkyBarrierDiode 10A45VHBR3045A SBD 30A 45V Schottky Barrier Diode 30A45VHBR2045 SBD 20A 45V Schottky Barrier Diode 20A45VHBR5100 SBD 5A 100V Schottky Barrier Diode 5A100VSBL240C SBD LOW VF 2A 40V Schottky Barrier Diode 2A40V3DD4251T BJT 0.5A 400V Bipolar Junction Transistor 0.5A400V3DD4242DM BJT 1.5A 400V Bipolar Junction Transistor 1.5A400V3DD13009N BJT 12A 400V Bipolar Junction Transistor 12A400V2SC5200C BJT 16A 350V HFE75-135 Bipolar Junction Transistor 16A350VT1635NZP TRIAC 16A 800V TRIode AC semiconductor switch 16A800V2SA1943C BJT -16A -250V Bipolar Junction Transistor -16A-250V3DD13003A 1.5A 450V Bipolar Junction Transistor 1.5A450V3DD4242DM 1.5A 400V Bipolar Junction Transistor 1.5A400V3DD4223DM 1.5A 400V Bipolar Junction Transistor 1.5A400V3DD4202BD 1.5A 400V Bipolar Junction Transistor 1.5A400V3DD4243D 2A 400V Bipolar Junction Transistor 2A400V3DD4203D 2A 400V Bipolar Junction Transistor 2A400VHBR5100U 5A 100V LOW VF Schottky Barrier Diode 5A100VHBR3200 3A 200V Schottky Barrier Diode 3A200VHBR5150 5A 150V Schottky Barrier Diode 5A150VHBR10100 10A 100V Schottky Barrier Diode 10A100VSBL3045S 30A 45V LOW VF Schottky Barrier Diode 30A45VHBR20100S SBD 20A 100V SchottkyBarrierDiode 20A100V